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  nmos linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. the scanning circuit is made up of n-channel mos transistors, operates at low power consumption and is easy to handle. each photodiode has a large active area, high sensitivity yet very low noise, delivering a high s/n even at low light levels. s3901/s3904-f series are current-output type nmos linear image sensors with fiber optic windows and feature superior output lin earity and wide dynamic range. the fiber optic windows allow efficient optical coupling to an image device such as image intensifiers suitable for low-light-level detection. the photodiodes of s3901-f series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 ?. the photodiodes of s3 904-f series also have a height of 2.5 mm but are arrayed at a spacing of 25 ?. the photodiodes are available in 2 different pixel quantiti es for each series: 256 (s3901-256f), 512 (s3901-512f, s3904-512f), 1024 (s3904-1024f). features l wide active area pixel pitch: 50 ? (s3901-f series) 25 ? (s3904-f series) pixel height: 2.5 mm l low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature l excellent output linearity and sensitivity spatial uniformity l lower power consumption: 1 mw max. l start pulse and clock pulses are cmos logic compatible applications l multichannel spectrophotometry l image readout system image sensor nmos linear image sensor nmos linear image sensors with fiber optic windows s3901/s3904-f series 2.5 mm s3901-f series: a=50 ?, b=45 ? s3904-f series: a=25 ?, b=20 ? b a 1.0 ? 1.0 ? 400 ? oxidation silicon n type silicon p type silicon fiber optic plate vss start st clock clock 1 2 active photodiode saturation control gate saturation control drain dummy diode dummy video active video end of scan digital shift register (mos shift register) absolute maximum ratings parameter symbol value unit input pulse ( 1, 2, st) voltage v 15 v power consumption* 1 p 1 mw operating temperature* 2 topr -40 to +65 c storage temperature tstg -40 to +85 c *1: v =5.0 v *2: no condensation kmpdc0020ea equivalent circuit active area structure kmpda0131ea 1
nmos linear image sensor s3901/s3904-f series shape specifications parameter s3901-256f s3901-512f s3904-512f s3904-1024f unit number of pixels 256 512 512 1024 - package length 31.75 40.6 31.75 40.6 mm number of pins 22 22 - window material fiber optic plate fiber optic plate - weight 8.0 10.0 8.0 10.0 g specifications (ta=25 c) s3901-f series s3904-f series parameter symbol min. typ. max. min. typ. max. unit pixel pitch - - 50 - - 25 - m pixel height - - 2.5 - - 2.5 - mm spectral response range (10% of peak) 360 to 1000 360 to 1000 nm peak sensitivity wavelength p - 600 - - 600 - nm photodiode dark current* 3 i d - 0.2 0.6 - 0.1 0.3 pa photodiode capacitance* 3 cph - 20 - - 10 - pf saturation exposure* 3 * 4 esat - 200 - - 200 - m l lx s saturation output charge* 3 qsat - 50 - - 25 - pc photo response non-uniformity* 5 prnu - - 5 - - 5 % *3: vb=2.0 v, v =5.0 v *4: 2856 k, tungsten lamp *5: 50% of saturation, excluding the start pixel and last pixel electrical characteristics (ta=25 c) s3901-f series s3904-f series parameter symbol condition min. typ. max. min. typ. max. unit high v 1, v 2 (h) 4.5 5 10 4.5 5 10 v clock pulse ( 1, 2) voltage low v 1, v 2 (l) 0 - 0.4 0 - 0.4 v high v s (h) 4.5 v 1 10 4.5 v 1 10 v start pulse ( st) voltage low v s (l) 0 - 0.4 0 - 0.4 v video bias voltage* 6 vb 1.5 v - 3.0 v - 2.5 1.5 v - 3.0 v - 2.5 v saturation control gate voltage vscg - 0 - - 0 - v saturation control drain voltage vscd - vb - - vb - v clock pulse ( 1, 2) rise / fall tim e * 7 tr 1, tr 2 tf 1, tf 2 - 20 - - 20 - ns clock pulse ( 1, 2) pulse width tpw 1, tpw 2 200 - - 200 - - ns start pulse ( st) rise / fall time tr s, tf s - 20 - - 20 - ns start pulse ( st) pulse width tpw s 200 - - 200 - - ns start pulse ( st) and clock pulse ( 2) overlap t ov 200 - - 200 - - ns clock pulse space* 7 x 1 , x 2 trf - 20 - - trf - 20 - - ns data rate* 8 f 0.1 - 2000 0.1 - 2000 khz - 120 (-256 f) - - 150 (-512 f) - ns video delay time tvd 50% of saturation * 8 * 9 - 160 (-512 f) - - 200 (-1024 f) - ns - 36 (-256 f) - - 50 (-512 f) - pf clock pulse ( 1, 2) line capacitance c 5 v bias - 67 (-512 f) - - 100 (-1024 f) - pf - 20 (-256 f) - - 24 (-512 f) - pf saturation control gate (vscg) line capacitance cscg 5 v bias - 35 (-512 f) - - 45 (-1024 f) - pf - 11 (-256 f) - - 16 (-512 f) - pf video line capacitance c v 2 v bias - 20 (-512 f) - - 30 (-1024 f) - pf *6: v is input pulse voltage. *7: trf is the clock pulse rise or fall time. a clock pulse space of ? rise tim e/fall tim e - 20 ? ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 20 ns. *8: vb=2.0 v, v =5.0 v *9: measured with c7883 driver circuit. 2
nmos linear image sensor s3901/s3904-f series 0.3 0.2 0.1 0 200 400 600 800 1000 1200 wavelength (nm) photo sensitivity (a/w) (ta=25 ?c) 10 5 10 2 10 1 10 0 10 1 10 2 10 3 10 4 10 3 10 2 10 1 10 0 output charge (pc) exposure ( lx s) (typ. vb=2 v, v =5 v, light source: 2856 k) saturation charge s3904-f series s3901-f series saturation charge kmpdb0173ea spectral response (typical example) output charge vs. exposure kmpdb0099eb 3
hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, www.hamamats u.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 8152- 375-0, fax: (49) 8152-265-8 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, teleph one: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv?gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8 -509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1 int. 6, 20020 arese, (milano), italy, telephone: (39) 02-935-81 -733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. type numbers of products listed inthe specification sheets or supplied as samples may have a suffix "(x)" which means tentative specifications or a suffix "(z)" which means developmental specifications. ?2010 hamamatsu photonics k.k. nmos linear image sensor s3901/s3904-f series cat. no. kmpd1003e04 jul. 2010 dn nc nc nc nc nc nc nc nc nc nc end of scan 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 2 1 st vss vscg nc vscd vss active video dummy video vsub vss, vsub and nc should be grounded. 0.51 25.4 2.54 3.0 active area 12.8 2.5 6.4 0.3 31.75 10.4 5.4 0.2 5.0 0.2 0.25 10.16 chip surface 31.2 9.8 10.0 3.0 0.51 25.4 40.0 9.8 10.0 3.0 3.0 40.6 10.4 5.4 0.2 5.0 0.2 12.8 0.3 active area 25.6 2.5 0.25 10.16 chip surface 2.54 dimensional outlines (unit: mm) s3901-256f, s3904-512f kmpda0093eb s3901-512f, s3904-1024f kmpda0094eb kmpdc0056ea pin connection 4


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